CMOS degradation effects due to electron beam lithography in smart NEMS fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5836, Issue , 2005, Pages 667-674

  Campabadal, Francesca ^a   Ghatnekar Nilsson, Sara ^b   Rius, Gemma ^a   Fleta, Celeste ^a   Rafi, Joan Marc ^a   Figueras, Eduard ^a   Esteve, Jaume ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b LUND UNIVERSITY   (Sweden)

Author keywords

CMOS degradation; Electron beam damage; Electron beam lithography; NEMS

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS; POLYSILICON;

CMOS DEGRADATION; ELECTRON BEAM DAMAGE; NEMS;

NANOTECHNOLOGY;

EID: 28344453755     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.607926     Document Type: Conference Paper

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