Improved channel mobility in normally-off 4H-SiC MOSFETs with buried channel structure

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1069-1072

  Harada, S ^a,b,c   Suzuki, S ^a,c   Senzaki, J ^a,b   Kosugi, R ^a,b   Adachi, K ^a,b   Fukuda, K ^a,b   Arai, K ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c R&D Association for Future Electron Devices   (Japan)

Author keywords

4H SiC; Buried channel; Channel mobility; MOSFETs; Oxidation; Threshold voltage

Indexed keywords

GATES (TRANSISTOR); NITROGEN; OXIDATION; RAPID THERMAL ANNEALING; SILICON CARBIDE; SILICON WAFERS; THERMOOXIDATION; THRESHOLD VOLTAGE; CARRIER MOBILITY; ION IMPLANTATION;

4H-SIC; BURIED CHANNELS; CHANNEL MOBILITY; MOSFETS; NITROGEN CONCENTRATIONS; NITROGEN ION IMPLANTATIONS; NORMALLY OFF MOSFET; THERMAL OXIDATION;

MOSFET DEVICES;

EID: 0036435358     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1069     Document Type: Conference Paper

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