The effect of RF-driven gate current on dc/RF performance in GaAs pHEMT MMIC power amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 11, 2005, Pages 3398-3406

  Chou, Yeong Chang ^a,b   Lai, Richard ^a,b   Block, Thomas R ^a,b,c   Sharma, Arvind ^a,b,d   Kan, Quin ^b   Leung, Denise Lew ^a,b   Eng, David ^b   Oki, Aaron ^b  

^a IEEE   (Japan)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c NGST ^*

^d Northrop Grumman   (United States)

Author keywords

Focused ion beam (FIB); Hot carrier; Impact ionization; Pseudomorphic high electron mobility transistor (pHEMT); RF drive; Scanning transmission electron microscopy (STEM)

Indexed keywords

FOCUSED-ION BEAMS (FIB); PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTORS (PHEMT); RF DRIVES; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

ELECTRIC CURRENTS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; HOT CARRIERS; IMPACT IONIZATION; ION BEAMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

POWER AMPLIFIERS;

EID: 28144443762     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.858384     Document Type: Conference Paper

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