Degradation mechanism of GaAs PHEMT power amplifiers under elevated temperature lifetest with RF-overdrive

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 463-468

  Chou, Y C ^a   Lai, R ^a   Grundbacher, R ^a   Yu, M ^a   Leung, D ^a   Callejo, L ^a   Eng, D ^a   Okazaki, D ^a   Yamane, B ^a   Kiyono, K ^a   Kan, Q ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM GALLIUM ARSENIDE; DEGRADATION; ELECTRIC FIELDS; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; PROGRAM PROCESSORS; RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

DEGRADATION MECHANISM; ELEVATED TEMPERATURE; GATE METAL INTERDIFFUSION; LIFE-TESTS; MEAN TIME TO FAILURE; RELIABILITY PERFORMANCE; SCHOTTKY BARRIERS; THREE TEMPERATURE;

ATMOSPHERIC TEMPERATURE;

EID: 28144435675     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315372     Document Type: Conference Paper

References (16)

1. R. Lai, M. Nishimoto, Y. Hwang, M. Miedenbender, B. Kasody, C. Geiger, Y.C. Chen and G. Zell, "A High Efficiency 0.15 um 2-mil Thick InGaAs/AlGaAs/GaAs V-and Power HEMT MMIC, " in Proceedings of the 18th Annual IEEE GaAs IC Symposium, 1996, pp. 225-227.
2. D. Leung, Y.C. Chou, C.S. Wu, R Kono, R. Lai, M. Hoppe and D.C. Streit, "High Reliability Non-Hermetic 0.15 tun GaAs Pseudomorphic HEMT MMIC Amplifiers", in Proceedings of the RF Integrated Circuits Symposium, 1999, pp. 261-267.
3. D. Leung, Y.C. Chou, J. Scarpulla, R Kono, R Lai, D. Eng, P.H. Liu and D.C. Streit, "High Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers", in Proceedings of the International Conference on Gallium-Arsenide Manufacaturing Technology Conference, 2001, pp. 115-118.
4. Y.C. Chou, D. Leung, R. Lai, J. Scarpulla, M. Biedenbender, R. Grunbacher, D. Eng, P.H. Liu, A. Oki and D.C. Streit, "High Reliability Non-Hermetic 0.1 um GaAs Pseudomorphic HEMT MMIC Amplifiers", in Proceedings of the GaAsIC Symposium, 2001, pp. 170-173.
5. J. C. M. Hwang, "Gradual Degradation under RF Overdrive of MESFETs and PHEMTs, " in Technical Digest of IEEE GaAs IC Symposium, 1995, pp. 81-84.
6. Y. A. Tkachenko, Y. Lan, D. S. Whitefield, C. I. Wei, J. C. M. Huang, T. D. Harris, R D. Grober, D. M. Hwang, L. Aucoin and S. Shanfield, "Hot-electron-induced Degradation of Metal-Semiconductor Field-Effect Transistors, " in Technical Digest of IEEE GaAsIC Symposium, 1994, pp. 259-262.
7. Y. A. Tkachenko, C. J. Wei, J. C. M. Huang, T. D. Harris, R. D. Grober, D. M. Hwang, L. Aucoin and S. Shanfield, "Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors, " in Technical Digest of IEEE Microwave Millimeter-wave Monolithic Circuits Symposium, 1995, pp. 115-118
8. M. Borgarino, R. Menozzi, Y. Baeyens, P. Cova and F. Fantini, "Hot Electron Degradation of the DC and RF Characteristics of AlGaAs/InGaAs/GaAs PHEMTs, " IEEE Trans Electron Devices, Vol. 45, 1998, pp. 366-372
9. D. Dieci, G. Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri and C. Canali, "Electric-Field-Related Reliability of AlGaAs/GaAs Power HFETs, " IEEE Trans Electron Devices, Vol. 48, 2001, pp. 1929-1936.
10. D. Dieci, R Menozzi, C. Lanzieri, L. Polenta and C. Canali, "Hot Electron Effects on Al0.25Ga0.75As/GaAs Power HFETs under Off-state and On-state Electrical Stress Conditions, " IEEE Trans Electron Devices, Vol. 47, 2000, pp. 261-268.
11. Y.C. Chou, G. P. Li, Y. C. Chen, R. Lai and D. C. Streit, "Reliability and Alleviation of Premature On-state Avalanche Breakdown in Deep Submicron Power PHEMTs", in Proceedings of IEEE International Reliability Physics Symposium, 1997, pp. 261-267.
12. V. Kapei and P. Ersland, "A Power Law Model for Assessment of Hot Electron Reliability in GaAs MESFETs and AlGaAsfInGaAs PHEMTs", in Proceedings of GaAs Mantech Conference, 2002, pp. 50-53.
13. T. Hisaka, Y. Nogami, H. Sasaki, A. Hasuiki, N. Yoshida, K. Hayashi, T. Sonoda, A. A. Villanueva and J. A. del Alamo, "Degradation Mechanism of PHEMT Under Large Signal Operation", in Technical Digest of IEEE GaAs IC Symposium, 2003, pp. 67-70.
14. C. H. Chen, G. Zell, Y. Saito, H. C. Yen, R. Lai, K. Tan and J. Loper, "RF-Stressed Life Test of Pseudomorphic InGaAs Power HEMT MMIC at 44 GHz", in Proceedings of IEEE MTT-Symposium, 1995, pp. 713-716.
15. C. H. Chen, Y. Saito, H. C. Yen, K. Tan, G. Onak and J. Mancini, "Reliability Study of Pseudomorphic InGaAs Power HEMT Devices at 60 GHz", in Proceedings of IEEE MTT-Symposium, 1994, pp. 817-820.
16. Y. C. Chou, R. Grundbacher, D. Leung, R. Lai, P. H. Liu, Q. Kan, M. Biedenbender, M. Wojtowicz, D. Eng and A. Oki, "Physical Identification of Gate Metal Interdifiusion in GaAs PHEMTs IEEE EDL-25, No. 2, 2004, pp. 64-66.