Ultra-low-temperature homoepitaxial growth of Sb-doped silicon

Journal of Crystal Growth

Volumn 285, Issue 4, 2005, Pages 473-480

  Blacksberg, Jordana ^a   Hoenk, Michael E ^a   Nikzad, Shouleh ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A1. Delta doping; A1. Surface segregation; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting silicon

Indexed keywords

ALUMINUM; ANTIMONY; LOW TEMPERATURE EFFECTS; METALLIZING; MOLECULAR BEAM EPITAXY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING;

DELTA DOPING; HOMOEPITAXIAL GROWTH; SURFACE SEGREGATION;

SEMICONDUCTING SILICON;

EID: 28144439686     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.005     Document Type: Article

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