Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 236-239

  Jiang, Z M ^a   Pei, C W ^a   Liao, L S ^a   Zhou, X F ^a   Zhang, X J ^a   Wang, Xun ^a   Jia, Q J ^b   Jiang, X M ^b   Ma, Z H ^c   Smith, Terry ^c   Sou, I K ^c  

^a FUDAN UNIVERSITY   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Molecular beam epitaxy; Surface segregation; X ray reflectivity

Indexed keywords

FILM GROWTH; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; X RAY ANALYSIS;

SURFACE SEGREGATION; X-RAY REFLECTIVITY;

SEMICONDUCTING FILMS;

EID: 0032320730     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01242-5     Document Type: Article

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