Ab initio study of the one-monolayer Sb/Si(0 0 1) interface

Surface Science

Volumn 532-535, Issue , 2003, Pages 661-665

  Cakmak M ^a   Shaltaf, R ^b   Srivastava, G P ^c   Ellialtioglu S ^b  

^a GAZI UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^c UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

Adsorption kinetics; Antimony; Arsenic; Chemisorption; Density functional calculations; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.); Surface stress

Indexed keywords

ADSORPTION; ANTIMONY; CHEMICAL BONDS; MONOLAYERS; PROBABILITY DENSITY FUNCTION; SILICON; SURFACE PHENOMENA; SURFACE ROUGHNESS;

ADSORPTION KINETICS;

INTERFACES (MATERIALS);

EID: 0038183860     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00454-0     Document Type: Conference Paper

References (25)

1. Boshart M.A., Bailes A.A. III, Seiberling L.E. Phys. Rev. Lett. 77:1996;1087.
2. Li G., Chang Y.-C. Phys. Rev. B. 50:1994;8675.
3. Krüger P., Pollmann J. Phys. Rev. B. 47:1993;1898.
4. Lee Y.J., Kim J.W., Kim S. J. Phys.: Cond. Matter. 9:1997;L583.
5. Alerhand O., Wang J., Joannopoulos J., Kaxiras E., Becker R. Phys. Rev. B. 44:1991;6534.
6. Tromp R., Denier A., Reuter M. Phys. Rev. Lett. 68:1992;2313.
7. Saranin A.A., Zotov A.V., Kotlyar V.G., Lifshits V.G., Kubo O., Harada T., Kobayashi T., Yamaoka N., Oura K. Phys. Rev. B. 65:2001;033312.
8. Srivastava G.P. Theoretical Modelling of Semiconductor Surfaces. 1999;World Scientific, Singapore. Home-grown computer code EKSETER (Evaluation of Kohn-Sham Equations by the Total Energy and Relaxation methods).
9. Gonze X.et al. Comp. Mater. Sci. 25:2002;478. The ABINIT code is a common project of the Université Catholique de Louvain, Corning Incorporated, and other contributors (URL: http://www.abinit.org ).
10. Bachelet G.B., Hamann D.R., Schlüter M. Phys. Rev. B. 26:1982;4199.
11. Ceperley D.M., Alder B.I. Phys. Rev. Lett. 45:1980;566.
12. Perdew J.P., Zunger A. Phys. Rev. B. 23:1981;5048.
13. Hamann D.R. Phys. Rev. B. 40:1989;2980.
14. Kleinman L., Bylander D.M. Phys. Rev. Lett. 48:1982;1425.
15. Fuchs M., Scheffler M. Comp. Phys. Commun. 119:1999;67.
16. Perdew J.P., Wang Y. Phys. Rev. B. 45:1992;13244.
17. Monkhorst H.J., Pack J.D. Phys. Rev. B. 13:1976;5188.
18. Çakmak M., Srivastava G.P. Phys. Rev. B. 61:2000;10216.
19. Richter M.et al. Phys. Rev. Lett. 65:1990;3417.
20. Tang S., Freeman A. Phys. Rev. B. 47:1993;1460.
21. Cho J.H., Kang M. Phys. Rev. B. 51:1995;5058.
22. Takeuchi N. Phys. Rev. B. 55:1997;2417.
23. Jenkins S., Srivastava G.P. Surf. Sci. 352:1996;411.
24. Vanderbilt D. Phys. Rev. Lett. 59:1987;1456.
25. Francis G.P., Payne M.C. J. Phys.: Cond. Matter. 2:1990;4395.