Tunable photonic strength in porous GaP

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4498-4500

  Rivas, J Gómez ^a   Lagendijk, A ^a   Tjerkstra, R W ^b   Vanmaekelbergh, D ^b   Kelly, J J ^b  

^a UNIVERSITY OF AMSTERDAM   (Netherlands)

^b UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTONIC APPLICATION; POROUS GALLIUM PHOSPHIDE; POROUS SEMICONDUCTORS; TUNABILITIES;

ELECTROCHEMICAL PROPERTIES; GALLIUM ALLOYS; GALLIUM PHOSPHIDE;

ELECTROCHEMICAL ETCHING;

EID: 79955994124     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1485316     Document Type: Article

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