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Solid State Communications

Volumn 97, Issue 8, 1996, Pages 675-678

Surface-related phonon mode in porous GaP

(6) Tiginyanu, I M a Ursaki, V V a Karavanskii, V A b Sokolov, V N b Raptis, Y S c Anastassakis, E c

a INSTITUTE OF APPLIED PHYSICS (Moldova)

b PROKHOROV GENERAL PHYSICS INSTITUTE (Russian Federation)

c NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

Author keywords

A. Nanostructures; A. Semiconductors; D. Phonons; E. Inelastic light scattering

Indexed keywords

ANODIC OXIDATION; CRYSTALLINE MATERIALS; ELECTROCHEMISTRY; ENERGY GAP; FREQUENCIES; HYDROFLUORIC ACID; NANOSTRUCTURED MATERIALS; PHONONS; POROUS MATERIALS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SURFACES;

ELECTROCHEMICAL ANODIZATION; INELASTIC LIGHT SCATTERING; PHONON CONFINEMENT; POROUS GALLIUM PHOSPHIDE; SURFACE PHONON MODE; SURFACE VIBRATIONAL MODE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030082530 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1098(95)00677-X Document Type: Article

Times cited : (47)

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