A multi-gate dielectric technology using hydrogen pre-treatment for 100nm generation system-on-a-chip

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 79-80

  Ono, A ^a   Fukasaku, K ^a   Hirai, T ^a   Makabe, M ^a   Koyama, S ^a   Ikezawa, N ^a   Ando, K ^a   Suzuki, T ^a   Imai, K ^a   Nakamura, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC FILMS; GATES (TRANSISTOR); HYDROGEN; INTERFACES (MATERIALS); OXIDATION;

HYDROGEN PRE-TREATMENTS; MULTI-GATE DIELECTRIC TECHNOLOGY; SYSTEM-ON-A-CHIP (SOC);

CMOS INTEGRATED CIRCUITS;

EID: 0034795379     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)