Characteristics of high-performance 1.0 μm and 1.3 μm quantum dot lasers: Impact of p-doping and tunnel injection

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 156-157

  Fathpour, S ^a   Mi, Z ^a   Chakrabarti, S ^a   Bhattacharya, P ^a   Kovsh, A R ^b   Mikhrin, S S ^b   Krestnikov, I L ^b   Kozhukhov, A V ^b   Ledentsov, N N ^b  

^a University of Michigan   (United States)

^b NL Nanosemiconductor GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PERFORMANCE; MODULATION BANDWIDTH; SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH); SLOPE EFFICIENCY;

BANDWIDTH; HETEROJUNCTIONS; MODULATION; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; TUNNEL JUNCTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18044393204     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367834     Document Type: Conference Paper

References (4)

1. R. L. Sellin, Ch. Ribbat, M. Grundmann, N. N. Ledentsov, and D. Bimberg, Appl. Phys. Lett., 78, 1207-1209 (2001)
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4. nd Annual Meeting - Extended Abstracts, 867 (2001).