Characterization of graded InGaN/GaN epilayers grown on sapphire

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 2, 2004, Pages 287-292

  Song, T L ^a   Chua, S J ^a   Fitzgerald, E A ^a,c   Chen, P ^b   Tripathy, S ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

STRAIN RELAXATION; THERMAL MISMATCH;

ANNEALING; ATOMIC FORCE MICROSCOPY; CHARGE COUPLED DEVICES; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); NUCLEATION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN;

GALLIUM NITRIDE;

EID: 1842504171     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1644114     Document Type: Article

References (12)

1. F. A. Ponce, J. S. Major, W. E. Plano, and D. F. Welch, Appl. Phys. Lett. 65, 2302 (1994).
2. J. E. Northrup, L. T. Romano, and J. Neugebauer, Appl. Phys. Lett. 74, 2319 (1999).
3. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, Appl. Phys. Lett. 72, 710 (1998).
4. H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, Appl. Phys. Lett. 79, 215 (2001).
5. V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitna, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and Q. W. Semchinova, J. Appl. Phys. 82, 5097 (1997).
6. A. Polian, M. Grimsditch, and I. Grzegory, J. Appl. Phys. 79, 3343 (1996).
7. -1 as the frequency of the unstrained GaN (400 μm thick freestanding GaN) and similar values of the Gruneisen parameters from Ref. 5. The results show that stress in the epilayers in structure I with graded InGaN/GaN buffers <0.03 GPa.
8. M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52, 11, 8132 (1995).
9. V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev, and A. Zubrilov, Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001), pp. 1-30.
10. F. Shahedipour and B. W. Wessels, Appl. Phys. Lett. 76, 3011 (2000).
11. H. Amano, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 27, L1384 (1983).
12. K. Hiramatsu, M. Shimizu, N. Sawaki, T. Zheleva, R. F. Davis, H. Tsuda, W. Taki, N. Kuwano, and K. Oki, MRS Internet J. Nitride Semicond. Res. 2, 6 (1997).