Electrical properties of Ag-doped Ge2Sb2Te 5 films used for phase change random access memory

Chinese Physics Letters

Volumn 22, Issue 4, 2005, Pages 934-937

  Xia, Ji Lin ^a,b   Liu, Bo ^a   Song, Zhi Tang ^a   Feng, Song Lin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; MAGNETRON SPUTTERING; PHASE CHANGE MEMORY; SEMICONDUCTOR DOPING; SILVER; TELLURIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

AG DOPED; AG DOPING; CRYSTALLIZATION TEMPERATURE; INDUCTIVELY COUPLED PLASMA ATOMIC EMISSION SPECTROMETRY; INDUCTIVELY COUPLED PLASMA ATOMIC-EMISSION SPECTROMETRIES; INDUCTIVELY COUPLED PLASMA-ATOMIC EMISSION SPECTROMETRY; PHASE-CHANGE RANDOM ACCESS MEMORY; R.F. MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; SI SUBSTRATES;

ENERGY UTILIZATION;

EID: 24144477870     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/4/043     Document Type: Article

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