Effects of excess Bi2O3 on the ferroelectric behavior of Nd-doped Bi4Ti3O12 thin films

Journal of the American Ceramic Society

Volumn 88, Issue 4, 2005, Pages 1037-1040

  Gao, Xingsen ^a   Zhou, Zhaohui ^a   Xue, Junmin ^a   Wang, John ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DEPOSITION; ELECTRIC PROPERTIES; FERROELECTRIC CERAMICS; MICROSTRUCTURE; POLARIZATION; SCANNING ELECTRON MICROSCOPY; SPUTTERING; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURE; FILM DEPOSITION; REMANENT POLARIZATION; RF SPUTTERING;

THIN FILMS;

EID: 27644435939     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2005.00201.x     Document Type: Article

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