Electrical properties of (Bi, La)4Ti3O12 based thin films prepared by RF sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 SUPPL. B, 1996, Pages 4960-4962

  Ichinose, Noboru ^a   Nomura, Masanobu ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Bismuth lanthanum titanate; Crystal structure; Fatigue properties; rf magnetron sputtering; Thin film

Indexed keywords

CHEMICAL COMPOSITION; FATIGUE PROPERTIES;

BISMUTH; ELECTRIC PROPERTIES; EXPERIMENTS; LANTHANUM; MAGNETRON SPUTTERING; TITANIUM;

THIN FILMS;

EID: 0030234714     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4960     Document Type: Article

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