AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2631-2634

  Schwindt, R ^a   Kumar, V ^a   Aktas, O ^b   Lee, J W ^c   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b BILKENT UNIVERSITY   (Turkey)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AMPLIFIERS (ELECTRONIC); CURRENT DENSITY; GAIN MEASUREMENT; GALLIUM NITRIDE; NATURAL FREQUENCIES; OSCILLATIONS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

INPUT RETURN LOSS; LOW NOISE AMPLIFIER; OUTPUT RETURN LOSS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 27344456602     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461544     Document Type: Conference Paper

References (14)

1. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, and T. J. Jenkins, IEEE Electron Device Lett. 20, 161 (1999).
2. N. X. Nguyen, M. Micovic, W.-S. Wong, P. Hashimoto, L.-M. McCray, P. Janke, and C. Nguyen, Electron. Lett. 36, 468 (2000).
3. V. Tilak, B. Green, V. Kaper, H. Kim, T. Prunty, J. Smart, J. Shealy, and L. Eastman, IEEE Electron Device Lett. 22, 504 (2001).
4. A. Zhang, L. Rowland, E. Kaminsky, J. Tucker, J. Kretchmer, A. Allen, J. Cook, and B. Edward, Electron. Lett. 39, 245 (2003).
5. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, IEEE Electron Device Lett. 24, 289 (2003).
6. Y.-F. Wu, A. Saxler, M. Moore, R. Smith, S. Sheppard, P. Chavarkar, T. Wisleder, and U. Mishra, IEEE Electron Device Lett. 25, 117 (2004).
7. A. T. Ping, E. Piner, J. Redwing, M. A. Khan, and I. Adesida, Electron. Lett. 36, 175 (2000).
8. N. X. Nguyen, M. Micovic, W.-S. Wong, P. Hashimoto, P. Janke, D. Harvey, and C. Nguyen, Electron. Lett. 36, 469 (2000).
9. W. Lu, V. Kumar, R. Schwindt, E. Finer, and I. Adesida, Solid State Electronics 46, 1441 (2002).
10. R. Welch, T. Jenkins, B. Neidhard, L. Kehias, T. Quach, P. Watson, R. Worley, M. Barsky, R. Sandhu, and M. Wojtowicz, in: IEEE GaAs IC Symposium Digest, Baltimore, Maryland, USA, 2001, (IEEE, Piscataway, 2001), pp. 153-155.
11. H. Xu, C. Sanabria, A. Chini, S. Keller, U. K. Mishra, and R. A. York, IEEE Microwave and Wireless Components Lett. 14, 262, (2004).
12. G. A. Ellis, J.-S. Moon, D. Wong, M. Micovic, A. Kurdoghlian, P. Hashimoto, and M. Hu, in: IEEE International Microwave Symposium Digest, Baltimore, Maryland, USA, 2004 (IEEE, Piscataway, 2004), pp. 153-156.
13. S. Cha, Y. H. Chung, M. Wojtowicz, I. Smorchkova, B. R. Allen, J. M. Yang, and R. Kagiwada, in: IEEE International Microwave Symposium Digest, Baltimore, Maryland, USA, 2004 (IEEE, Piscataway, 2004), pp. 829-832.
14. D. Selvanathan, L. Zhou, V. Kumar, and I. Adesida, phys. stat. sol. (a) 194, 583 (2002).