Low noise hybrid amplifier using AlGaN/GaN power HEMT devices

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 153-155

  Welch, R ^a   Jenkins, T ^a   Neidhard, B ^a   Kehias, L ^a   Quach, T ^a   Watson, P ^a   Worley, R ^a   Barsky, M ^a   Sandhu, R ^a   Wojtowicz, M ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS (LNA);

AMPLIFIERS (ELECTRONIC);

EID: 0035167591     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Wide bandgap semiconductor transistors for microwave power amplifiers
2. Very-high power density AlGaN/GaN HEMTs
3. Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates
4. Robust low microwave noise GaN MODFETs with 0.6dB noise figure at 10 GHz
5. τ and low microwave noise