Characterization of annealing effect on the surface, interface and bulk of AlN grown on SiC

International Journal of Refractory Metals and Hard Materials

Volumn 24, Issue 1-2, 2006, Pages 55-60

  Feng, P X ^a   De Jesus, Joel ^a   Morell, G ^a   Resto, Oscar ^a   Fonseca, Luis F ^a   Weiner, Brad ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

AlN films; Hollow cathode; Plasma; Raman spectrum

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CATHODES; ELECTRIC FIELD EFFECTS; SPUTTERING;

CATHODE DISCHARGE SPUTTERING; OPTICAL BANDS; OPTICAL MODES;

ALUMINUM COMPOUNDS;

EID: 27144515324     PISSN: 02634368     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijrmhm.2005.04.023     Document Type: Article

References (27)

1. L. Liu, B. Liu, J.H. Edgara, S. Rajasingam, and M. Kuball Raman characterization and stress analysis of AlN grown on SiC by sublimation J Appl Phys 92 2002 5183 5188
2. O. Ambacher Growth and applications of Group III-nitrides J Phys D 31 1998 2653 2710
3. P.K. Huo, G.W. Auner, and Z.L. Wu Microstructure and thermal conductivity of epitaxial AlN thin films Thin Solid Flims 253 1994 223 227
4. E.F. McCullen, H.E. Prakasam, W.J. Mo, R. Naik, K.Y.S. Ng, and L. Rimai Electrical characterization of metal'AlN'Si thin film hydrogen sensors with Pd and Al gates J Appl Phys 93 2003 5757 5762
5. R. Rodriguez-Clemente, B. Aspar, N. Azema, B. Armas, C. Combescure, and J. Durand Morphological properties of chemical vapour deposited AlN films J Cryst Growth 133 1993 59 70
6. H. Harris, N. Biswas, H. Temkin, S. Gangopadhyay, and M. Strathman Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride J Appl Phys 90 2001 5825 5831
7. C.R. Miskys, J.A. Garrido, C.E. Nebel, M. Hermann, O. Ambacher, and M. Eickhoff AlN/diamond heterojunction diodes Appl Phys Lett 82 2003 290 292
8. A. Rodriguez-Navarro, W. Otano-Rivera, J.M. Garcia-Ruiz, R. Messier, and L.J. Pilione Development of preferred orientation in polycrystalline AlN thin films deposited by rf sputtering system at low temperature J Mater Res 12 1997 1850 1855
9. A. Rodriguez-Navarro, W. Otano-Rivera, L.J. Pilione, R. Messier, and J.M. Garcia-Ruiz Control of the preferred orientation of AlN thin films collimated sputtering J Vac Sci Technol 16A 1998 1244 1246
10. A. Rodriguez-Navarro, W. Otano-Rivera, J.M. Garcia-Ruiz, R. Messier, and L.J. Pilione Preparation of highly oriented polycrystalline AlN thin films deposited on glass at oblique-angle incidence J Mater Res 12 1997 1689 1692
11. A.K. Sharma, and R.K. Thareja Pulsed laser ablation of aluminum in the presence of nitrogen: formation of aluminum nitride J Appl Phys 88 2000 733 738
12. Y.F. Lu, Z.M. Ren, T.C. Chong, B.A. Cheong, S.K. Chow, and J.P. Wang Ion-assisted pulsed laser deposition of aluminum nitride thin films J Appl Phys 87 2000 1540 1542
13. G. Vogg, C.R. Miskys, J.A. Garrido, M. Hermann, M. Eickhoff, and M. Stutzmann High quality heteroepitaxial AlN films on diamond J Appl Phys 96 2004 895 902
14. H.J. Shim, I.J. Hwang, K.S. Kim, B.K. Cho, J.T. Kim, and J.H. Sok Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier J Appl Phys 92 2002 1095 1998
15. 2-Ar plasma etching J Appl Phys 95 2004 4635 4641
16. J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, V. Krishnamoorthy, S. Bharatan, and K.S. Jones Growth of AlN by metalorganic molecular beam epitaxy Appl Phys Lett 67 1995 253 255
17. I. Yonenaga Hardness of bulk single-crystal GaN and AlN MRS Internet J Nitride Semicond Res 7 6 2002 1 4
18. S. Strite, and H. Morkoç GaN, AlN and InN J Vac Sci Technol 10B 1992 1237 1253
19. J.M. Wagner, and F. Bechstedt Phonon deformation potentials of α-GaN and -AlN: an ab initio calculation Appl Phys Lett 77 2000 346 348
20. Feng PX, Yen YH, Lian TX. Synthesis ultrahard nanoscale carbon nitride thin films. In: 2nd Congress on integrating NASA Research and Education Project in PR, USA 19-23 November 2003. p. 75.
21. P.X. Feng, D. Andruczyk, B.W. James, K. Takiyama, S. Namba, and T. Oda An effect of discharge current and voltage on high density of metastable helium atoms Chin Phys 12 2003 495 502
22. L. Rittenhouse Tilghman, W. Bohn Paul, K. Hossain Tim, A. Ilesanmi, J. Lindesay, and A. Marcus Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide J Appl Phys 95 2004 490 496
23. J. Gleize, M.A. Renucci, J. Frandon, E. Bellet-Amalric, and B. Daudin Phonon deformation potentials of wurtzite AlN J Appl Phys 93 2003 2065 2068
24. A. Sarua, J. Monecke, G. Irmer, I.M. Tiginyanu, G. Gartner, and H.L. Hartnagel Fröhlich modes in porous III-V semiconductors J Phys C: Condens Matter 13 2001 6687 6706
25. S. Hayashi, and H. Kanamori Raman scattering from the surface phonon mode in GaP microcrystals Phys Rev B 26 1982 7079 7082
26. L. Bergman, M. Dutta, C. Balkas, R.F. Davis, J.A. Christman, and D. Alexson Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN J Appl Phys 85 1999 3535 3539
27. Z.Q. Li, H. Chen, F.Q. Kong, Q. Sun, and Y. Kawazoe Relaxations of nonpolar zinc blend (110) surface of GaN, AlN and BN J Appl Phys 84 1998 1977 1980