Raman characterization and stress analysis of AlN grown on SiC by sublimation

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5183-5188

  Liu, L ^a   Liu, B ^a   Edgar, J H ^a   Rajasingam, S ^b   Kuball, M ^b  

^a Sunflower Networking Group   (United States)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BULK ALN; CRYSTAL QUALITIES; EXPERIMENTAL VALUES; FREQUENCY SHIFT; GROWING SURFACES; RAMAN CHARACTERIZATION; RAMAN PEAK; SAMPLE THICKNESS; TRANSVERSE OPTICAL;

GROWTH TEMPERATURE; STRESS ANALYSIS; STRESS CONCENTRATION; THICKNESS MEASUREMENT;

SILICON CARBIDE;

EID: 18744407369     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506195     Document Type: Article

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