Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier

Journal of Applied Physics

Volumn 92, Issue 2, 2002, Pages 1095-1098

  Shim, H J ^a   Hwang, I J ^a   Kim, K S ^a   Cho, B K ^a   Kim, Jin Tae ^b   Sok, J H ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; AL-METAL; ALN; ANTIFERROMAGNETIC LAYERS; BIAS VOLTAGE DEPENDENCE; DEFECT STATE; FERROMAGNETIC LAYERS; LOW FREQUENCY; MAGNETIC TUNNEL JUNCTION; NITRIDATION TIME; NITRIDED; OPTIMAL CONDITIONS; OXIDATION TIME; PLASMA NITRIDATION; TUNNEL BARRIER; VOLTAGE DEPENDENCE; VOLTAGE FLUCTUATIONS; VOLTAGE NOISE;

ALUMINUM; DEFECTS; ELECTRIC RESISTANCE; IRON COMPOUNDS; MAGNETIC DEVICES; MAGNETOELECTRONICS; MAGNETORESISTANCE; NITROGEN PLASMA;

ALUMINUM NITRIDE;

EID: 0037100904     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1488252     Document Type: Article

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