Fabrication of InGaAsP/InP Two-Dimensional Periodic Nanostructure with Variable Sizes and Periods Using Laser Holography and Reactive Ion Etching

Electrochemical and Solid-State Letters

Volumn 7, Issue 1, 2004, Pages

  Lee, Ji Myon ^a   Oh, Su Hwan ^a   Lee, Chul Wook ^a   Ko, Hyunsung ^a   Park, Sahnggi ^a   Kim, Ki Soo ^a   Park, Moon Ho ^a  

^a Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALS; DRY ETCHING; HOLOGRAPHY; LASER BEAMS; NANOTECHNOLOGY; PHOTOLUMINESCENCE; PHOTORESISTS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; WAVEGUIDES;

INCIDENT ANGLES; PHOTONIC CRYSTALS (PC);

NANOSTRUCTURED MATERIALS;

EID: 0942266989     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1626993     Document Type: Article

References (17)

1. E. Yablonovitch, J. Opt. Soc. Am. B, 10, 283 (1993).
2. E. Chow, S. Y. Lin, S. G. Johnson, P. R. Villeneuve, J. D. Joannopoulos, J. R. Wendt, G. A. Vawter, W. Zubrzycki, H. Hou, and S. Alleman, Nature (London), 407, 983 (2000).
3. Y. Sugimoto, N. Ikeda, N. Carlsson, K. Asakawa, N. Kawai, and K. Inoue, J. Appl. Phys., 91, 922 (2002).
4. M. Loncar, T. Yoshie, A. Scherer, P. Gogna, and Y. Qiu, Appl. Phys. Lett., 81, 2680 (2002).
5. S. Olivier, H. Benisty, C. Weisbuch, C. J. M. Smith, T. F. Krauss, R. Houdre, and U. Oesterle, J. Lightwave Technol., 20, 1198 (2002).
6. H. Kosaka, T. Kawashima, A. Tomita, T. Sato, and S. Kawakami, Appl. Phys. Lett., 76, 268 (2000).
7. T. Baba and T. Matsuzaki, Jpn. J. Appl. Phys., Part 1, 35, 1348 (1996).
8. C. C. Cheng, A. Scherer, R. C. Tyan, Y. Fainman, G. Witzgall, and E. Yablonovitch, J. Vac. Sci. Technol. B, 15, 2764 (1997).
9. J. Moosburger, T. Happ, M. Kamp, and A. Forchel, J. Vac. Sci. Technol. B, 18, 3501 (2000).
10. R. Ferrini, B. Lombardet, B. Wild, R. Houdre, S. Olivier, H. Benisty, A. Djoudi, L. Legoueziou, S. Hubert, S. Sainson, J. P. Chandouineau, S. Fabre, F. Pommereau, and G. H. Duan, Electron. Lett., 38, 962 (2002).
11. T. Ohira, T. Segawa, K. Nagai, K. Utaka, and M. Nakao, Jpn. J. Appl. Phys., Part 1, 41, 1085 (2002).
12. S. C. Kitson, W. L. Barnes, and J. R. Sambles, IEEE Photonics Technol. Lett., 8, 1662 (1996).
13. F. H. Dill, W. P. Hornberger, P. S. Hauge, and J. M. Shaw, IEEE Trans. Electron Devices, ED-22, 445 (1975).
14. C. A. Mack, J. Electrochem. Soc., 134, 148 (1987).
15. T. Baba, N. Kamizawa, and M. Ikeda, Physica B, 227, 415 (1996).
16. D. M. Manos and D. L. Flamm, in Plasma Etching, An Introduction, D. M. Manos and D. L. Flamm, Editors, Chap. 1, Academic press, San Diego, CA (1989).
17. B. Corbett and W. M. Kelly, Appl. Phys. Lett., 93, 87 (1993).