Limits of strain relaxation in InGa/AsGaAs probed in real time by in situ wafer curvature measurement

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Lynch, C ^a   Chason, E ^a   Beresford, R ^a   Freund, L B ^a   Tetz, K ^a,c   Schwarz, K W ^b  

^a Brown University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GLIDE OF DISLOCATIONS; MISMATCHED SUBSTRATES; NONUNIFORM DISLOCATION ARRAYS; STRESS MEASUREMENTS;

ARRAYS; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; REAL TIME SYSTEMS; RESIDUAL STRESSES; STRESS RELAXATION; SUBSTRATES; THIN FILMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 27144456147     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2060947     Document Type: Article

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