Nature and origin of pure edge dislocations in low mismatched epitaxial structures

Journal of Crystal Growth

Volumn 172, Issue 1-2, 1997, Pages 58-63

  Vdovin, V I ^a  

^a INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS;

BURGERS VECTORS; EPILAYER; EPITAXIAL STRUCTURES; PURE EDGE DISLOCATIONS;

DISLOCATIONS (CRYSTALS);

EID: 0031546753     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00734-8     Document Type: Article

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