A double-walled carbon nanotube field-effect transistor using the inner shell as its gate

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 23, Issue 1-2, 2004, Pages 232-236

  Liang, Y X ^a   Wang, T H ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Ballistic transport; Double walled carbon nanotube; Field effect transistor; Inter shell conductance

Indexed keywords

CARBON NANOTUBES; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; FERMI LEVEL; MATHEMATICAL MODELS; PLASMA ETCHING; TRANSPORT PROPERTIES;

BALLISTIC TRANSPORT; DOUBLED-WALLED CARBON NANOTUBE; INTER-SHELL CONDUCTANCE; NANOELECTRONICS;

MOSFET DEVICES;

EID: 2642535341     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.03.004     Document Type: Article

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