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Volumn 46, Issue 5, 2004, Pages 836-841

Edge photoluminescence spectra and the intensity of the intracenter f-f transitions in Er- and Sm-doped GaN crystals

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EID: 2642520624     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1744957     Document Type: Article
Times cited : (4)

References (23)
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    • (1999) Semiconductors , vol.33 , pp. 1284
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    • N. A. Cherkashin, N. A. Bert, Yu. G. Musikhin, S. V. Novikov, T. S. Cheng, and C. T. Foxon, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 903 (2000) [Semiconductors 34, 867 (2000)].
    • (2000) Semiconductors , vol.34 , pp. 867
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    • V. V. Krivolapchuk, M. M. Mezdrogina, A. V. Nasonov, and S. V. Rodin, Fiz. Tverd. Tela (St. Petersburg) 45 (9), 1556 (2003) [Phys. Solid State 45, 1634 (2003)].
    • (2003) Phys. Solid State , vol.45 , pp. 1634
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    • V. V. Krivolapchuk, M. M. Mezdrogina, and N. K. Poletaev, Fiz. Tverd. Tela (St. Petersburg) 45 (1), 29 (2003) [Phys. Solid State 45, 28 (2003)].
    • (2003) Phys. Solid State , vol.45 , pp. 28
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    • V. V. Krivolapchuk, M. M. Mezdrogina, S. D. Raevskiǐ, A. P. Skvortsov, and Sh. A. Yusupova, Pis'ma Zh. Tekh. Fiz. 28 (7), 19 (2002) [Tech. Phys. Lett. 28, 270 (2002)].
    • (2002) Tech. Phys. Lett. , vol.28 , pp. 270


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.