TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate

Semiconductors

Volumn 34, Issue 8, 2000, Pages 867-871

  Cherkashin, N A ^a   Bert, N A ^a   Musikhin, Yu G ^a   Novikov, S V ^a   Cheng, T S ^b   Foxon, C T ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034239141     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1188090     Document Type: Article

References (8)

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