Effect of extrinsic impedance and parasitic capacitance on figure of merit of RF MOSFET

IEEE Transactions on Electron Devices

Volumn 52, Issue 9, 2005, Pages 2054-2060

  Yeh, Wen Kuan ^a   Ku, Chao Ching ^b   Chen, Shuo Mao ^b   Fang, Yean Kuen ^b   Chao, C P ^c  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b Institute of Microelectronics   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Gate to bulk capacitance; Radio frequency (RF); Source impedance

Indexed keywords

CAPACITANCE; ELECTRIC IMPEDANCE; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES;

GATE-TO-BULK CAPACITANCE; RADIO FREQUENCY (RF); SOURCE IMPEDANCE;

MOSFET DEVICES;

EID: 26244451388     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.855060     Document Type: Article

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