메뉴 건너뛰기




Volumn , Issue , 2005, Pages 155-160

Technology-circuit co-design in width-quantized quasi-planar double-gate SRAM

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; STATIC RANDOM ACCESS STORAGE;

EID: 25844486080     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/icicdt.2005.1502618     Document Type: Conference Paper
Times cited : (7)

References (22)
  • 1
    • 29044440093 scopus 로고    scopus 로고
    • FinFET - A self-aligned double-gate MOSFET scalable to 20nm
    • Dec
    • D. Hisamoto et al., "FinFET - a self-aligned double-gate MOSFET scalable to 20nm," IEEE Trans. Electron Devices, vol. 47, no. 12, pp. 2320-2325, Dec 2000.
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.12 , pp. 2320-2325
    • Hisamoto, D.1
  • 2
    • 0037646045 scopus 로고    scopus 로고
    • Advanced depleted-substrate transistors: Single-gate, double-gate and tri-gate
    • Nagoya, Japan
    • R. Chau et al., "Advanced depleted-substrate transistors: single-gate, double-gate and tri-gate," in Intl. Conf. on Solid State Devices and materials, Nagoya, Japan 2002, pp. 68-69.
    • (2002) Intl. Conf. on Solid State Devices and Materials , pp. 68-69
    • Chau, R.1
  • 3
    • 0036932378 scopus 로고    scopus 로고
    • 25 nm CMOS Omega FETs
    • F.-L. Yang et al., "25 nm CMOS Omega FETs," in IEDM Dig., 2002, pp. 255-258.
    • (2002) IEDM Dig. , pp. 255-258
    • Yang, F.-L.1
  • 6
    • 0031235595 scopus 로고    scopus 로고
    • One billion transistors, one uniprocessor, one chip
    • Sep
    • Y. Patt, S. Patel, M. Evers, D. Friendly, and J. Stark, "One billion transistors, one uniprocessor, one chip," IEEE Trans. Comput., vol. 30, no. 9, pp. 51-57, Sep 1997.
    • (1997) IEEE Trans. Comput. , vol.30 , Issue.9 , pp. 51-57
    • Patt, Y.1    Patel, S.2    Evers, M.3    Friendly, D.4    Stark, J.5
  • 7
    • 0036163060 scopus 로고    scopus 로고
    • Nanoscale CMOS spacer FinFET for the terabit era
    • Jan
    • Y.-K. Choi, T.-J. King, and C. Hu, "Nanoscale CMOS spacer FinFET for the terabit era," IEEE Electron Device Lett., vol. 23, no. 1, pp. 25-27, Jan 2002.
    • (2002) IEEE Electron Device Lett. , vol.23 , Issue.1 , pp. 25-27
    • Choi, Y.-K.1    King, T.-J.2    Hu, C.3
  • 8
    • 0036923438 scopus 로고    scopus 로고
    • FinFET scaling to 10nm gate length
    • B. Yu et al., "FinFET scaling to 10nm gate length," in IEDM Dig., 2002, pp. 251-254.
    • (2002) IEDM Dig. , pp. 251-254
    • Yu, B.1
  • 9
    • 0041886632 scopus 로고    scopus 로고
    • Ideal rectangular cross-section Si-nu channel double-gate MOSFETs fabricated using orientation-dependent wet etching
    • July
    • Y. Liu, K. Ishit, T. Tsutsuini, M. Masahara, and E. Suzuki, "Ideal rectangular cross-section Si-nu channel double-gate MOSFETs fabricated using orientation-dependent wet etching," IEEE Electron Device, Lett., vol. 24, no. 7. pp. 484-486, July 2003.
    • (2003) IEEE Electron Device, Lett. , vol.24 , Issue.7 , pp. 484-486
    • Liu, Y.1    Ishit, K.2    Tsutsuini, T.3    Masahara, M.4    Suzuki, E.5
  • 10
    • 0035445204 scopus 로고    scopus 로고
    • A study of the threshold voltage variation for ultra-small talk amd SOI CMOS
    • July
    • K. Takeuchi, R. Koh, and T. Mogarni, "A study of the threshold voltage variation for ultra-small talk amd SOI CMOS," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1995-2001, July 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.9 , pp. 1995-2001
    • Takeuchi, K.1    Koh, R.2    Mogarni, T.3
  • 11
    • 0242332710 scopus 로고    scopus 로고
    • Sensitivity of double-gate and FinFET devices to process variations
    • Nov
    • S. Xiong and J. Bokor, "Sensitivity of double-gate and FinFET devices to process variations," IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2255-2261, Nov 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.11 , pp. 2255-2261
    • Xiong, S.1    Bokor, J.2
  • 12
    • 0041525428 scopus 로고    scopus 로고
    • A physical short-channel threshold voltage model for adoped symmetric double-gate MOSFETs
    • Jul
    • Q. Chen, E. Harrell, and J. Metndi, "A physical short-channel threshold voltage model for adoped symmetric double-gate MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1631-1637, Jul 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.7 , pp. 1631-1637
    • Chen, Q.1    Harrell, E.2    Metndi, J.3
  • 13
    • 0023437909 scopus 로고
    • Static-noise margin analysis of MOS SRAM cells
    • Oct
    • E. Seevinck, F. List, and J. Lohstroh, "Static-noise margin analysis of MOS SRAM cells," IEEE J. Solid-State Circuits, vol. 22, no. 5, pp. 748-754, Oct 1987.
    • (1987) IEEE J. Solid-State Circuits , vol.22 , Issue.5 , pp. 748-754
    • Seevinck, E.1    List, F.2    Lohstroh, J.3
  • 15
    • 4243216494 scopus 로고    scopus 로고
    • High-performance symmetric-gate and CMOS-compatible VI asymmatric-gate FinFET devices
    • J. Kedzterski et al., "High-performance symmetric-gate and CMOS-compatible VI asymmatric-gate FinFET devices," in IEDM Dig., 2002, pp. 19.5.1-19.5.4.
    • (2002) IEDM Dig.
    • Kedzterski, J.1
  • 16
    • 0036923636 scopus 로고    scopus 로고
    • A functional FinFET-DGCMOS SRAM cell
    • E. Nowak et al., "A functional FinFET-DGCMOS SRAM cell," in IEDM Dig., 2002, pp. 411-414.
    • (2002) IEDM Dig. , pp. 411-414
    • Nowak, E.1
  • 17
    • 4544332286 scopus 로고    scopus 로고
    • Modeling and estiamtion of failure probalility due to parameter variations in nano-scale SRAMs for yield enhancement
    • S. Mukhopadhyay, H. Mahmoodi-Meimand, and K. Roy, "Modeling and estiamtion of failure probalility due to parameter variations in nano-scale SRAMs for yield enhancement," in Symp. on VLSI Curcuits Dig., 2004, pp. Dig., 2004, pp. 64-67.
    • (2004) Symp. on VLSI Curcuits Dig. , pp. 64-67
    • Mukhopadhyay, S.1    Mahmoodi-Meimand, H.2    Roy, K.3
  • 18
    • 1342286939 scopus 로고    scopus 로고
    • A continuous, analytic drain-current model for DG MOSTETs
    • February
    • Y. Taur, X. Liang, W. Wang, and H. Lu, "A continuous, analytic drain-current model for DG MOSTETs," IEEE Electron Device Lett., vol. 25, no. 2, pp. 107-109, February 2004.
    • (2004) IEEE Electron Device Lett. , vol.25 , Issue.2 , pp. 107-109
    • Taur, Y.1    Liang, X.2    Wang, W.3    Lu, H.4
  • 19
    • 4243262198 scopus 로고    scopus 로고
    • Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFETs at the 25nm channel length generation
    • H.-S. Wong, D. Frank, and P. Solemon, "Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFETs at the 25nm channel length generation," in IEDM Dig., 1998, pp. 15.2.1-15.2.4.
    • (1998) IEDM Dig.
    • Wong, H.-S.1    Frank, D.2    Solemon, P.3
  • 21
    • 0028430427 scopus 로고
    • Hole injection SIO2 breakdown model for very low voltage lifetime extraplolation
    • May
    • S. Xiong and J. Boker, "Hole injection SIO2 breakdown model for very low voltage lifetime extraplolation," IEEE Trans. Electron Devices, vol. 41, no. 5, pp. 761-767, May 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , Issue.5 , pp. 761-767
    • Xiong, S.1    Boker, J.2
  • 22
    • 0036999726 scopus 로고    scopus 로고
    • Direct-funneling gate leakage current in double-gate and ultrathin body MOSFETs
    • Dec
    • L. Chang et al., "Direct-funneling gate leakage current in double-gate and ultrathin body MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 12, pp. 2288-2295, Dec 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , Issue.12 , pp. 2288-2295
    • Chang, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.