-
1
-
-
29044440093
-
FinFET - A self-aligned double-gate MOSFET scalable to 20nm
-
Dec
-
D. Hisamoto et al., "FinFET - a self-aligned double-gate MOSFET scalable to 20nm," IEEE Trans. Electron Devices, vol. 47, no. 12, pp. 2320-2325, Dec 2000.
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, Issue.12
, pp. 2320-2325
-
-
Hisamoto, D.1
-
2
-
-
0037646045
-
Advanced depleted-substrate transistors: Single-gate, double-gate and tri-gate
-
Nagoya, Japan
-
R. Chau et al., "Advanced depleted-substrate transistors: single-gate, double-gate and tri-gate," in Intl. Conf. on Solid State Devices and materials, Nagoya, Japan 2002, pp. 68-69.
-
(2002)
Intl. Conf. on Solid State Devices and Materials
, pp. 68-69
-
-
Chau, R.1
-
3
-
-
0036932378
-
25 nm CMOS Omega FETs
-
F.-L. Yang et al., "25 nm CMOS Omega FETs," in IEDM Dig., 2002, pp. 255-258.
-
(2002)
IEDM Dig.
, pp. 255-258
-
-
Yang, F.-L.1
-
5
-
-
2942689838
-
FinFET SRAM - Device and circuit design considerations
-
H. Ananthan, A. Bansal, and K. Roy, "FinFET SRAM - device and circuit design considerations," in Proc. Intl. Symp. Quality Electronic Design, 2004, pp. 511-516.
-
(2004)
Proc. Intl. Symp. Quality Electronic Design
, pp. 511-516
-
-
Ananthan, H.1
Bansal, A.2
Roy, K.3
-
6
-
-
0031235595
-
One billion transistors, one uniprocessor, one chip
-
Sep
-
Y. Patt, S. Patel, M. Evers, D. Friendly, and J. Stark, "One billion transistors, one uniprocessor, one chip," IEEE Trans. Comput., vol. 30, no. 9, pp. 51-57, Sep 1997.
-
(1997)
IEEE Trans. Comput.
, vol.30
, Issue.9
, pp. 51-57
-
-
Patt, Y.1
Patel, S.2
Evers, M.3
Friendly, D.4
Stark, J.5
-
7
-
-
0036163060
-
Nanoscale CMOS spacer FinFET for the terabit era
-
Jan
-
Y.-K. Choi, T.-J. King, and C. Hu, "Nanoscale CMOS spacer FinFET for the terabit era," IEEE Electron Device Lett., vol. 23, no. 1, pp. 25-27, Jan 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, Issue.1
, pp. 25-27
-
-
Choi, Y.-K.1
King, T.-J.2
Hu, C.3
-
8
-
-
0036923438
-
FinFET scaling to 10nm gate length
-
B. Yu et al., "FinFET scaling to 10nm gate length," in IEDM Dig., 2002, pp. 251-254.
-
(2002)
IEDM Dig.
, pp. 251-254
-
-
Yu, B.1
-
9
-
-
0041886632
-
Ideal rectangular cross-section Si-nu channel double-gate MOSFETs fabricated using orientation-dependent wet etching
-
July
-
Y. Liu, K. Ishit, T. Tsutsuini, M. Masahara, and E. Suzuki, "Ideal rectangular cross-section Si-nu channel double-gate MOSFETs fabricated using orientation-dependent wet etching," IEEE Electron Device, Lett., vol. 24, no. 7. pp. 484-486, July 2003.
-
(2003)
IEEE Electron Device, Lett.
, vol.24
, Issue.7
, pp. 484-486
-
-
Liu, Y.1
Ishit, K.2
Tsutsuini, T.3
Masahara, M.4
Suzuki, E.5
-
10
-
-
0035445204
-
A study of the threshold voltage variation for ultra-small talk amd SOI CMOS
-
July
-
K. Takeuchi, R. Koh, and T. Mogarni, "A study of the threshold voltage variation for ultra-small talk amd SOI CMOS," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1995-2001, July 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.9
, pp. 1995-2001
-
-
Takeuchi, K.1
Koh, R.2
Mogarni, T.3
-
11
-
-
0242332710
-
Sensitivity of double-gate and FinFET devices to process variations
-
Nov
-
S. Xiong and J. Bokor, "Sensitivity of double-gate and FinFET devices to process variations," IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2255-2261, Nov 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.11
, pp. 2255-2261
-
-
Xiong, S.1
Bokor, J.2
-
12
-
-
0041525428
-
A physical short-channel threshold voltage model for adoped symmetric double-gate MOSFETs
-
Jul
-
Q. Chen, E. Harrell, and J. Metndi, "A physical short-channel threshold voltage model for adoped symmetric double-gate MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1631-1637, Jul 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.7
, pp. 1631-1637
-
-
Chen, Q.1
Harrell, E.2
Metndi, J.3
-
13
-
-
0023437909
-
Static-noise margin analysis of MOS SRAM cells
-
Oct
-
E. Seevinck, F. List, and J. Lohstroh, "Static-noise margin analysis of MOS SRAM cells," IEEE J. Solid-State Circuits, vol. 22, no. 5, pp. 748-754, Oct 1987.
-
(1987)
IEEE J. Solid-State Circuits
, vol.22
, Issue.5
, pp. 748-754
-
-
Seevinck, E.1
List, F.2
Lohstroh, J.3
-
15
-
-
4243216494
-
High-performance symmetric-gate and CMOS-compatible VI asymmatric-gate FinFET devices
-
J. Kedzterski et al., "High-performance symmetric-gate and CMOS-compatible VI asymmatric-gate FinFET devices," in IEDM Dig., 2002, pp. 19.5.1-19.5.4.
-
(2002)
IEDM Dig.
-
-
Kedzterski, J.1
-
16
-
-
0036923636
-
A functional FinFET-DGCMOS SRAM cell
-
E. Nowak et al., "A functional FinFET-DGCMOS SRAM cell," in IEDM Dig., 2002, pp. 411-414.
-
(2002)
IEDM Dig.
, pp. 411-414
-
-
Nowak, E.1
-
17
-
-
4544332286
-
Modeling and estiamtion of failure probalility due to parameter variations in nano-scale SRAMs for yield enhancement
-
S. Mukhopadhyay, H. Mahmoodi-Meimand, and K. Roy, "Modeling and estiamtion of failure probalility due to parameter variations in nano-scale SRAMs for yield enhancement," in Symp. on VLSI Curcuits Dig., 2004, pp. Dig., 2004, pp. 64-67.
-
(2004)
Symp. on VLSI Curcuits Dig.
, pp. 64-67
-
-
Mukhopadhyay, S.1
Mahmoodi-Meimand, H.2
Roy, K.3
-
18
-
-
1342286939
-
A continuous, analytic drain-current model for DG MOSTETs
-
February
-
Y. Taur, X. Liang, W. Wang, and H. Lu, "A continuous, analytic drain-current model for DG MOSTETs," IEEE Electron Device Lett., vol. 25, no. 2, pp. 107-109, February 2004.
-
(2004)
IEEE Electron Device Lett.
, vol.25
, Issue.2
, pp. 107-109
-
-
Taur, Y.1
Liang, X.2
Wang, W.3
Lu, H.4
-
19
-
-
4243262198
-
Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFETs at the 25nm channel length generation
-
H.-S. Wong, D. Frank, and P. Solemon, "Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFETs at the 25nm channel length generation," in IEDM Dig., 1998, pp. 15.2.1-15.2.4.
-
(1998)
IEDM Dig.
-
-
Wong, H.-S.1
Frank, D.2
Solemon, P.3
-
21
-
-
0028430427
-
Hole injection SIO2 breakdown model for very low voltage lifetime extraplolation
-
May
-
S. Xiong and J. Boker, "Hole injection SIO2 breakdown model for very low voltage lifetime extraplolation," IEEE Trans. Electron Devices, vol. 41, no. 5, pp. 761-767, May 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, Issue.5
, pp. 761-767
-
-
Xiong, S.1
Boker, J.2
-
22
-
-
0036999726
-
Direct-funneling gate leakage current in double-gate and ultrathin body MOSFETs
-
Dec
-
L. Chang et al., "Direct-funneling gate leakage current in double-gate and ultrathin body MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 12, pp. 2288-2295, Dec 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, Issue.12
, pp. 2288-2295
-
-
Chang, L.1
|