Comparative characterization of InGaN/GaN multiple quantum wells by transmission electron microscopy, X-ray diffraction and rutherford backscattering

Chinese Physics Letters

Volumn 22, Issue 10, 2005, Pages 2700-2703

  Zhou, Sheng Qiang ^a   Wu, Ming Fang ^a   Yao, Shu De ^a   Zhang, Guo Yi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; GALLIUM ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ALLOYS; PERIODIC STRUCTURES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR ALLOYS; X RAY DIFFRACTION;

COMPARATIVE CHARACTERIZATIONS; DEGREE OF RELAXATION; ELASTIC-STRAINS; IN COMPOSITIONS; INGAN/GAN; MULTI-LAYERED STRUCTURE; PERIODIC THICKNESS; RUTHERFORD BACKSCATTERING CHANNELING; STRUCTURAL DEFECT; X- RAY DIFFRACTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 25644451205     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/10/067     Document Type: Article

References (18)

1. Langer R, Simon J, Konovalov O, Pelekanos P, Barski A and Leszczyski M 1998 MRS Internet J. Nitride Semicond. Res. 3 46
2. Vickers M E, Kappers M J, Smeeton T M, Thrush E J, Barnard J S and Humphreys C J 2003 J. Appl. Phys. 94 1565
3. Zhou J and Zhang G Y 2002 Chin. Phys. Lett. 19 707
4. Zhou S Q, Wu M F and Yao S D 2005 Chin. Phys. Lett. 22 1984
5. Wu M F et al 2004 J. Vac. Sci. Tech. B 22 920
6. Lester S D, Ponce F A, Craford M G and Steigerwald D A 1995 Appl. Phys. Lett. 62 1249
7. Gerthsen D, Hahn E, Neubauer B, Potin V, Rosenauer A and Schowalter M 2003 Phys. Status Solidi C 0 1668
8. Lu M, Chang X, Li Z L, Yang Z J, Zhang G Y and Zhang B 2003 Chin. Phys. Lett. 20 398
9. Srinivasan S, Liu R, Bertram F, Ponce F A, Tanaka S, Omiya H and Nakagawa Y 2001 Phys. Status Solidi B 228 41
10. Pereira S, Correia M R, Pereira E, O'Donnell K P, Alves E, Sequeira A D and Franco N 2001 Appl. Phys. Lett. 79 1432
11. Fewster P F 1997 Crit. Rev. Solid State Mater. Sci. 22 69
12. Pereira S, Correia M R, Pereira E, O'Donnell K P, Alves E, Sequeira A D, Franco N, Watson I M and Deatcher C J 2002 Appl. Phys. Lett. 80 3913
13. Krost A, Bläsing J, Lünenbürger M, Protzmann H and Heuken M 1999 Appl. Phys. Lett. 75 689
14. Kim D J, Moon Y T, Song K M and Park S J 2001 Jpn. J. Appl. Phys. 40 3085
15. Wen T C and Lee W I 2001 Jpn. J. Appl. Phys. 40 5302
16. Fewster P F 1992 J. Appl. Cryst. 25 714
17. Davies J A 1995 Handbook of Modern Ion Beam Materials Analysis (Pittsburgh: Materials Research Society) p 343
18. Grotzschel R, Klein C and Kruse O 2001 Nucl. Instrum. Methods Phys. Res. B 183 3