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Volumn 19, Issue 5, 2002, Pages 707-710
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Growth and optical properties of double heterostructure GaN/InGaN/GaN films with large composition
a
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HETEROJUNCTIONS;
INDIUM ALLOYS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
PHASE SEPARATION;
SEMICONDUCTOR ALLOYS;
X RAY DIFFRACTION;
BOWING PARAMETERS;
DIFFERENT THICKNESS;
DOUBLE HETEROSTRUCTURES;
GAN FILM;
GAN/INGAN;
INGAN/GAN;
METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS;
RAMAN FREQUENCIES;
ROOM-TEMPERATURE PHOTOLUMINESCENCE;
VEGARD'S LAW;
III-V SEMICONDUCTORS;
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EID: 0036000723
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/19/5/331 Document Type: Article |
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Times cited : (11)
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References (11)
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