Self-organized InGaAs quantum dots grown on GaAs (3 1 1)B substrate studied by conductive atomic force microscope technique

Journal of Crystal Growth

Volumn 245, Issue 3-4, 2002, Pages 212-218

  Okada, Yoshitaka ^a   Miyagi, Masashi ^a   Akahane, Kouichi ^a   Kawabe, Mitsuo ^a   Shigekawa, Hidemi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE TREATMENT; VACUUM;

CONDUCTIVE ATOMIC FORCE MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036847155     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01702-5     Document Type: Article

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