Technical aspects of 〈112̄0〉 4H-SiC MOSFET processing

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 680-685

  Blanc, C ^a   Tournier, D ^b   Souliere V ^c   Juillaguet, S ^a   Contreras, S ^a   Zielinski, M ^a   Godignon, P ^b   Monteil, Y ^c   Camassel, Jean ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN FORMATION; EPITAXIAL LAYER; OXIDATION KINETICS; P-TYPE DOPING;

DOPING (ADDITIVES); HALL EFFECT; MOSFET DEVICES; OXIDATION; PHOTOLUMINESCENCE; SILICON WAFERS;

SILICON CARBIDE;

EID: 25444492266     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460473     Document Type: Conference Paper

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