Temperature-dependent Hall effect measurements in low - Compensated p-type 4H-SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 677-680

  Kasamakova Kolaklieva, L ^a   Storasta, L ^a   Ivanov, I G ^a   Magnusson, B ^a,b   Contreras, S ^c   Consejo, C ^c   Pernot, J ^c   Zielinski, M ^c   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Al doping; Hall effect; P type 4H SiC

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); HALL EFFECT; IONIZATION; THERMAL EFFECTS;

AL DOPING; DOPING CONCENTRATION; IONIZATION ENERGY; P-TYPE 4H-SIC;

SILICON CARBIDE;

EID: 8744295956     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.677     Document Type: Conference Paper

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