Aluminum incorporation into 4H-SiC layers during epitaxial growth in a hot-wall CVD system

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 207-210

  Wagner, G ^a   Leitenberger, W ^a   Irmscher, K ^a   Schmid, F ^b   Laube, M ^b   Pensl, G ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Aluminum; Epitaxial growth; Hot wall CVD; SiC

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; EPILAYERS; EPITAXIAL GROWTH; SILICON CARBIDE;

ALUMINUM INCORPORATION; CHEMICAL VAPOUR DEPOSITION; CONCENTRATION RANGES; HOT WALL; HOT-WALL REACTORS; PROCESS GAS; SIC EPILAYERS; TRIMETHYLALUMINIUM;

GROWTH RATE;

EID: 0037673391     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028hnnwscientific.net/MSF.389-393.207     Document Type: Conference Paper

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