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Volumn 202, Issue 4, 2005, Pages 550-554

Control of Al-doping in 4H-SiC homo-epitaxial layers grown with a HMDS/TMA/P mixture

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINIUM CONCENTRATION; HEXAMETHYLDISILANE (HMDS); TRIMETHYLALUMINIUM (TMA); VERTICAL REACTOR;

ALUMINUM; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; PROPANE; SEMICONDUCTOR DOPING; SILANES; THERMAL EFFECTS;

SILICON CARBIDE;

EID: 25444438218 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200460419 Document Type: Conference Paper

Times cited : (5)

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