Complementary double-exposure technique (CODE): A way to print 80- and 65-nm gate levels using a double-exposure binary mask approach

Journal of Microlithography, Microfabrication and Microsystems

Volumn 3, Issue 2, 2004, Pages 305-315

  Manakli, Serdar ^a,b   Trouiller, Yorick ^c   Toublan, Olivier ^d   Schiavone, Patrick ^b   Rody, Yves ^e   Goirand, P J ^a  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

^c CEA LETI   (France)

^d MENTOR GRAPHICS CORPORATION   (United States)

^e NXP SEMICONDUCTORS   (Netherlands)

Author keywords

65 nm node; 90 nm node; ArF; Complementary double exposure; Double mask exposure; Resolution enhancement technique

Indexed keywords

ARGON; ERROR DETECTION; ILLUMINATING ENGINEERING; INTEGRATED CIRCUITS; LITHOGRAPHY; LOGIC CIRCUITS; MICROPROCESSOR CHIPS; PHASE SHIFT; PRINTING; SCANNING; SEMICONDUCTOR DEVICE MANUFACTURE;

65-NM NODE; 90-NM NODE; ARF; BINARY MASK PRINTING TECHNIQUES; COMPLIMENTARY DOUBLE EXPOSURE; DOUBLE MASK EXPOSURE; RESOLUTION ENHANCEMENT TECHNIQUE (RET);

MASKS;

EID: 2542434347     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1683359     Document Type: Article

References (16)

1. A. K. Wong, Resolution Enhancement Techniques in Optical Lithography, Optical Engineering Press, SPIE, Bellingham, WA (2001).
2. B. J. Lin, "The attenuated phase-shifting mask," Solid State Technol 35(1), 33-47 (Jan. 1992).
3. M. D. Levenson, N. S. Viswanathan, and R. A. Simpson, "Improving resolution in lithography with phase-shifting mask," IEEE Trans. Electron Devices 29, 1828 (1982).
4. T. Terasawa, N. Hasegawa, and H. Fukuda, "Imaging characteristics of multiphase-shifting and half tone phase-shifting masks," J. Appl. Phys. Jpn., Part 1 30, 2991 (1991).
5. L. Liebmann, I. Graur, W. Leipold, J. Oberschmidt, D. O'Grady, and D. Regaill, "Alternating phase shifted mask for logic gate levels, design and mask manufacturing," Proc. SPIE 3679, 27-37 (1999).
6. Y. Trouiller, J. Serrand, C. Miramond, Y. Rody, S. Manakli, and P. J. Goirand, "80 nm ArF imaging with off axis illumination and sub resolution assist bars: compromise between mask constraint and lithographic process constraint," Proc. SPIE 4691, 1522-1529 (2002).
7. B. Smith and D. Ewbank, "OPC and image optimization using localized frequency analysis," Proc. SPIE 4691, 148-157 (2002).
8. H. Fukuda, N. Hasegawa, and S. Okazaki, "Improvement of defocus tolerance in a half-micron optical lithography by the focus latitude enhancement exposure method: Simulation and experiment," J. Vac. Sci. Technol. B 7(4), 667 (1989).
9. S. Manakli, Y. Trouiller, P. Schiavone, P. Spinelli, O. Le-Borgne, J. P. Chollet, Y. Rody, and P. J. Goirand, "Combination of multiple focal planes and PSM for sub 120 nm node with KrF lithography: study of the proximity effects," Micro Nano Eng. 61,62, 123 (2001).
10. 1 = 0.3 lithography," Proc. SPIE 3679, 396-407 (1999).
11. B. Kasprowicz, C. Progler, W. Wu, W. Conley, L. Litt, D. Van Den Broeke, K. Wampler, and R. Socha, "Application of chromeless phase lithography (CPL) masks in ArF lithography," Proc. SPIE 4889, 1189-1201 (2002).
12. S. Nakao, K. Narimatsu, T. Miyagi, S. Ogawa, N. Tamada, A. Nakae, A. Tokui, K. Tsujita, I. Arimoto, W. Wakamiya et al., "Innovative imaging of ultra-fine line without using any strong RET," Proc. SPIE 4346, 503-514 (2001).
13. S. Manakli, Y. Trouiller, O. Toublan, P. Schiavone, Y. Rody, C. Miramond, F. Sundermann, J. D. Chapon, and P. J. Goirand, "Complementary double exposure: a way to print 80-nm gate feature" Proc. SPIE 4691, 491-502 (2002).
14. S. Manakli, Y. Trouiller, O. Toublan, P. Schiavone, Y. Rody, and P. J. Goirand, "Complementary double exposure technique (CODE), solutions for the two dimensional structures of the 90 nm node," Proc. SPIE 4889, 1181-1188 (2002).
15. S. Manakli, Y. Trouiller, O. Toublan, P. Schiavone, Y. Rody, and P. J. Goirand, "Using the CODE technique to print complex two-dimensional structures in a 90 nm ground rule process," Proc. SPIE 5042, 205-213 (2003).
16. Y. Trouiller, J. Belledent, J. D. Chapon, V. Roussel, Y. Rody, S. Manakli, and P. J. Goirand, "Gate imaging for 0.09 μm logic technology: comparison of single exposure with assist bars and the CODE approach," Proc. SPIE 5040, 1231-1240 (2003).