Using the CODE technique to print complex two-dimensional structures in a 90nm ground rule process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5042, Issue , 2003, Pages 205-213

  Manakli, S ^a,d   Trouiller, Y ^b   Toublan, O ^c   Schiavone, P ^d   Rody, Y ^e   Goirand, P J ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c MENTOR GRAPHICS CORPORATION   (United States)

^d CEA GRENOBLE   (France)

^e NXP SEMICONDUCTORS   (Netherlands)

Author keywords

65nm node; 90nm node; ArF; CODE; Double mask exposure; RET

Indexed keywords

ARGON; COMPUTER SIMULATION; IMAGE ANALYSIS; LIGHTING; PRINTING; SCANNING;

MASK EXPOSURE;

MASKS;

EID: 0242609801     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485529     Document Type: Conference Paper

References (7)

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2. S. Manakli, Y. Trouiller, O. Toublan, P. Schiavone, Y. Rody, PJ. Goirand "Complementary Double Exposure Technique (CODE), solutions for the two dimensional structures of the 90nm node" Proc of BACUS vol 4889 p.1181 (2002)
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5. Y. Trouiller, J. Serrand, C. Miramond, Y. Rody, S. Manakli, PJ. Goirand "80 nm ArF imaging with off axis illumination and sub resolution assist bars: compromise between mask constraint and lithographic process constraint" Proc of SPIE vol 4691 p.1522 (2002)
6. Y. Trouiller, J. Belledent, JD. Chapon, V. Rousset, Y. Rody, S. Manakli, PJ. Goirand "Gate imaging for 0.09μm logic technology: comparison of single exposure with assist bars and the CODE approach" will be published in the Proc of SPIE 2003
7. B. Smith, D. Ewbank "OPC and image optimization using localized frequency analysis" Proc of SPIE vol 4691 p.148 (2002)