Combination multiple focal planes and PSM for sub 120 nm node with KrF lithography: Study of the proximity effects

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 123-132

  Manakli, S ^a,c   Trouiller, Y ^b   Schiavone, P ^c   Spinelli, P ^b   Le Borgne, O ^a   Chollet, J P ^a   Rody, Y ^d   Goirand, P J ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c CEA GRENOBLE   (France)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Contacts; KrF; Proximity effects; PSM; Side lobes; Symmetrical double exposure; Vias

Indexed keywords

IMAGE ANALYSIS; KRYPTON; MASKS; PHASE SHIFT; PHOTOLITHOGRAPHY;

MULTIPLE FOCAL PLANES;

MICROELECTRONICS;

EID: 0036643580     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00521-X     Document Type: Conference Paper

References (3)

1. A novel method for improving the defocus tolerance in step and repeat photolithography
2. Improved process latitude photolithography 0.18 μm technology by using multiple focal planes
3. Innovation in optical lithography; Non-advanced KrF lithography with advanced outlook for Sub-100 nm node