Gate imaging for 0.09μm logic technology: Comparison of single exposure with assist bars and the CODE approach

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 II, Issue , 2003, Pages 1231-1240

  Trouiller, Y ^a   Belledent, J ^c   Chapon, J D ^b   Rousset, V ^b   Rody, Y ^c   Manakli, S ^b   Goirand, P J ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

ArF lithography; Assist feature; CODE; Mask error factor; Scattering bar

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; IMAGING TECHNIQUES; INTEGRATED CIRCUIT MANUFACTURE; LOGIC DESIGN; LOGIC GATES; MASKS; PRINTED CIRCUIT DESIGN;

ASSIST FEATURE; COMPLEMENTARY DOUBLE EXPOSURE; GATE IMAGING; GATE LEVEL PRINTING; MASK ERROR FACTOR; PHASE SHIFTING MASK; SCATTERING BAR;

LITHOGRAPHY;

EID: 0141721814     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485527     Document Type: Conference Paper

References (5)

1. Y. Trouiller, J. Serrand, C. Miramond, Y. Rody, S. Manakli, P-J. Goirand "80 nm ArF imaging with off axis illumination and sub resolution assist bars: compromise between mask constraint and lithographic process constraint" Proc of SPIE vol 4691 p.1522 (2002)
2. Lars W. Liebmann et all "Optimizing Style Options for Sub-Resolution Assist Features", p 141-152 Vol 4346 SPIE 2001
3. S. Manakli, Y. Trouiller, O. Toublan, P. Schiavone, Y. Rody, C. Miramond, F. Sundermann, J-D.Chapon, P-J.Goirand "Complementary double exposure: a way to print 80nm gate feature" Proc of SPIE vol 4691 p.491 (2002)
4. S. Manakli, Y. Trouiller, O. Toublan, P. Schiavone, Y. Rody, P-J. Goirand "Complementary Double Exposure Technique (CODE), solutions for the two dimensional structures of the 90nm node" Proc of BACUS vol 4889 p.1181 (2002)
5. G. Vandenberghe et all "ArF lithography Options for 100nm Technologies", p 179-190 Vol 4346 SPIE 2001