Complementary Double Exposure Technique (CODE), solutions for the two dimensional structures of the 90 nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 2, 2002, Pages 1181-1188

  Manakli, S ^a,d   Trouiller, Y ^b   Toublan, O ^c   Schiavone, P ^d   Rody, Y ^e   Goirand, P J ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c MENTOR GRAPHICS CORPORATION   (United States)

^d CEA GRENOBLE   (France)

^e NXP SEMICONDUCTORS   (Netherlands)

Author keywords

2 dimensional structures; 80 nm gate; ArF; CODE; Double exposure; Line end shortening

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

COMPLEMENTARY DOUBLE EXPOSURE TECHNIQUE;

MASKS;

EID: 0038641982     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.468203     Document Type: Conference Paper

References (5)

1. S.Manakli, Y.Trouiller, O.Toublan, P.Schiavone, Y.Rody, C.Miramond, F.Sundermann, JD.Chapon, PJ.Goirand "Complementary double exposure: a way to print 80nm gate feature" Proc of SPIE vol 4691 p.491 (2002)
2. M.D. Levenson, N.S. Viswanathan and R. A. Simpson, "Improving resolution in lithography with phase-shifting mask", IEEE Trans. Electron Device Vol 29, p1828 (1982)
3. T. Terasawa, N. Hasegawa, and H. Fukuda "Imaging characteristics of multiphase-shifting and half tone phase-shifting masks", Jpn. J. Appl. Phy. Vol 30, p2991 (1991)
4. Y.Trouiller, J.Serrand, C.Miramond, Y.Rody, S.Manakli, PJ.Goirand "80 nm ArF imaging with off axis illumination and sub resolution assist bars: compromise between mask constraint and lithographic process constraint" Proc of SPIE vol 4691 p. 1522 (2002)
5. S.Nakao et al. "Innovative Imaging of ultra-fine line without using any strong RET", SPIE vol.4346 p503-514, 2001.