Investigations of possible nitrogen participation in the Z 1/Z2 defect in 4H-SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 469-472

  Storasta, L ^a   Henry, A ^a   Bergman, J P ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

DLTS; Intrinsic defects; Phosphorus

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; IRRADIATION; MATHEMATICAL MODELS; NITROGEN; PHOSPHORUS; TRANSMISSION ELECTRON MICROSCOPY;

ENERGETIC PARTICLES; EPILAYERS; INTRINSIC DEFECTS; NITROGEN CONCENTRATION;

SILICON CARBIDE;

EID: 5044224699     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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