Low temperature annealing of electron irradiation induced defects in 4H-SiC

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3780-3782

  Castaldini, Antonio ^a   Cavallini, Anna ^a   Rigutti, Lorenzo ^a   Nava, Filippo ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; MAGNETRON SPUTTERING; THERMAL CONDUCTIVITY;

ENERGY LEVEL; ENERGY PATHWAYS; ION IRRADIATION; RADIATION HARDNESS;

SILICON CARBIDE;

EID: 9744242035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1810627     Document Type: Article

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