Analysis of SAW properties in ZnO/Al xGa 1-xN/c-Al 2O 3 structures

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 52, Issue 7, 2005, Pages 1161-1168

  Chen, Ying ^a   Emanetoglu, Nuri William ^a   Saraf, Gaurav ^a   Wu, Pan ^a   Lu, Yicheng ^a   Parekh, Aniruddh ^b   Merai, Vinod ^b   Udovich, Eric ^b   Lu, Dong ^b   Lee, Dong S ^b   Armour, Eric A ^b   Pophristic, Milan ^c  

^a RUTGERS UNIVERSITY   (United States)

^b Veeco Compound Semiconductor Inc   (United States)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMECHANICAL COUPLING COEFFICIENTS; PIEZOELECTRIC THIN FILMS; RADIO FREQUENCY (RF); VELOCITY DISPERSION; COUPLING COEFFICIENT; MULTILAYER STRUCTURES; RADIO-FREQUENCY SPUTTERING; SURFACE ACOUSTIC WAVES; THICKNESS FREQUENCIES;

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC WAVE VELOCITY; ALUMINUM NITRIDE; BANDWIDTH; GALLIUM NITRIDE; PIEZOELECTRIC DEVICES; SAPPHIRE; SUBSTRATES; THICKNESS MEASUREMENT; THIN FILMS; ZINC OXIDE; ACOUSTIC WAVES; ACOUSTICS; ELECTROMECHANICAL COUPLING; FILM PREPARATION; GALLIUM ALLOYS; METALLIC FILMS; VELOCITY;

ACOUSTIC WAVES; ALUMINUM;

EID: 24944489373     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2005.1504002     Document Type: Article

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