AlN epitaxial film with atomically flat surface for GHz-band saw devices

Proceedings of the IEEE Ultrasonics Symposium

Volumn 1, Issue , 2002, Pages 135-138

  Uehara, K ^a   Yang, C M ^a   Nakamura, H ^a   Kameda, S ^a   Nakase, H ^a   Tsubouchi, K ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SAPPHIRE; SURFACE ROUGHNESS; THICKNESS MEASUREMENT;

EPITAXIAL FILM; TRIMETHYLALUMINUM; WAVE NUMBER;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0036992729     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. K. Tsubouchi and N. Mikoshiba, IEEE Trans. Sonics Ultrason., SU-32 (1985).
2. T. Suetsugu, T. Yamazaki, S. Tomabechi, K. Wada, K. Masu and K. Tsubouchi, Appl. Surface Science, 117/118(1997), 540-545.
3. Y. Ohba, H. Yoshida, and R. Sato, Jpn J. Appl. Phys., 36(1997), L1565-1567.
4. S. Kaneko, M. Tanaka, K. Masu, K. Tsubouchi and N. Mikoshiba, J. Cryst. Gr. 115 (1991), 643-647.