AlN and GaN layers deposited on sapphire or silicon substrates: Theory and experiment

Proceedings of the IEEE Ultrasonics Symposium

Volumn 1, Issue , 2000, Pages 293-297

  Pastureaud, Th ^a   Soufyane, A ^a   Camou, S ^a   Ballandras, S ^a   Schenck, D ^b   Semond, F ^b   Desbois, J ^c   Laude, V ^c  

^a CNRS   (France)

^b CRHEA CNRS   (France)

^c Thomson Microsonics   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC SURFACE WAVE FILTERS; ALUMINUM NITRIDE; GALLIUM NITRIDE; SAPPHIRE; SILICON; SUBSTRATES; TELECOMMUNICATION SYSTEMS;

SILICON SUBSTRATES;

DEPOSITION;

EID: 0034580014     PISSN: 10510117     EISSN: None     Source Type: Journal    
DOI: 10.1109/ULTSYM.2000.922559     Document Type: Article

References (11)

1. Aluminum nitride on different orientations of sapphire and silicon
2. Elastic moduli of gallium nitride
3. A mixed FEM/BEM approach to characterize surface aves on multilayer substrate
4. Propagation of surface acoustic waves in multilayers: A matrix description
5. Matrix methods applied to acoustic waves in multilayers
6. Dyadic Green's function for multi-layer substrates
7. A new efficient FEM and periodic Green's function formalism for the analysis of periodic SAW structures
8. GAN on Si(111): From two-dimensional to quantum well assessment
9. SPUDT-based filters: Design principles and optimization