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Volumn 1, Issue , 2002, Pages 57-60

High frequency SAW devices on AlGaN: Fabrication, characterization and integration with optoelectronics

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE VELOCITY; ALUMINUM NITRIDE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC PROPERTIES;

EID: 0036995588     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (24)

References (8)
  • 2
    • 0013178069 scopus 로고    scopus 로고
    • M. Shur: http://nina.ecse.rpi.edu/shur/nitride.htm
    • Shur, M.1
  • 3
    • 0032181962 scopus 로고    scopus 로고
    • Growth and applications of group III-nitrides
    • O. Ambacher: "Growth and applications of group III-nitrides", J. Phys. D: Appl. Phys., vol. 31, 2653 (1998).
    • (1998) J. Phys. D: Appl. Phys. , vol.31 , pp. 2653
    • Ambacher, O.1
  • 4
    • 0003879728 scopus 로고    scopus 로고
    • Surface acoustic wave devices for mobile and wireless communications
    • Academic Press
    • C. K. Campbell, Surface acoustic wave devices for mobile and wireless communications, Academic Press, 1998.
    • (1998)
    • Campbell, C.K.1
  • 8
    • 0003567180 scopus 로고    scopus 로고
    • Surface acoustic wave devices in telecommunications: Modelling and simulation
    • Springer Verlag
    • K.-Y. Hashimoto, Surface acoustic wave devices in telecommunications: modelling and simulation, Springer Verlag, 2000.
    • (2000)
    • Hashimoto, K.-Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.