Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers

Semiconductor Science and Technology

Volumn 1, Issue 1, 1986, Pages 7-27

  Blood, P ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTES;

CAPACITANCE-VOLTAGE PROFILING; CARRIER CONCENTRATION; ELECTROLYTE BARRIERS; III-V SEMICONDUCTORS; PHOTOVOLTAGE ABSORPTION SPECTROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 0022747235     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/1/1/002     Document Type: Article

References (43)

1. An instrument for the rapid determination of semiconductor impurity profiles
2. The influence of debye length on the C-V measurement of doping profiles
3. On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]
4. A feedback method for investigating carrier distributions in semiconductors
5. Series resistance effects in semiconductor CV profiling