Modeling of the influence of the defect position on the reflected intensity in EUV mask

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5751, Issue II, 2005, Pages 629-639

  Besacier, Maxime ^a   Schiavone, Patrick ^a   Farys, Vincent ^a   Smaali, Rafik ^a  

^a CEA GRENOBLE   (France)

Author keywords

Absorber pattern; Aerial image; Defective mask; Euv Lithography; Modal method; Planarization effect; Simulation

Indexed keywords

COMPUTER SIMULATION; ELECTROMAGNETIC FIELD EFFECTS; FOURIER TRANSFORMS; MODAL ANALYSIS; ULTRAVIOLET RADIATION;

ABSORBER PATTERN; AERIAL IMAGE; DEFECTIVE MASK; EUV LITHOGRAPHY; MODAL METHOD; PLANARIZATION EFFECT;

LITHOGRAPHY;

EID: 24644486468     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.598415     Document Type: Conference Paper

References (15)

1. P. Evanschitzky, A. Erdmann, M. Besacier, and P. Schiavone: "Simulation of Extreme Ultraviolet Masks with Defective Multilayers'", Proc. SPIE Conf. Photomask and Next-Generation Lithography Mask Technology X, 2003, vol. 5130, p. 1035.
2. M. Ito, T. Ogawa, K. Otaki, W. Nishyama, S. Okazaki, and T. Terasawa: "Simulation of Multilayer defects in Extreme Ultraviolet Masks" Jpn. J. Appl. Phys. 40 (2001), 2549.
3. B. S. Bollepalli and F. Cerrina: "Reflection from EUV Masks", Proc. SPIE Conf. Emerging Lithographic Technologies III, Santa Clara (USA), 1999, vol. 3676, p. 587.
4. M. Brukman, Y. Deng, A. Neureuther : "Simulation of EUV Multilayer Mirror Buried Defects", Proc. SPIE Conf. Emerging Lithographic Technologies IV, Santa Clara (USA), 2000, vol. 3997, p. 799.
5. T. Pistor, A. Neureuther:" Extreme ultraviolet mask defect simulation ", J. Vac. Sci. Technol. B 17 (1999), p 3019.
6. P. B. Mirkarimi, S. L. Baker, and D. G. Stearns:" Investigating the growth of localized defects in thin films using gold nanospheres", J. Vac. Sci. Technol. B 19 (2001).
7. E.Quesnel, J.Hue, V.Muffato, C.Pelle and P.Lamy, "Investigation of nodule growth in IBS Mo/Si multilayers for EUV lithography masks", J. of Vac. Sci. Technol. B 22(5), Sep/Oct 2004.
8. G.F. Cardinale, A.K. Ray-Chaudhuri, A. Fisher, P.S.J. Mangat, J. Wasson, P.B. Mirkarimi, E. Gullikson:" Effects of smoothing on defect printability at extreme ultraviolet wavelengths", J. Vac. Sci. Technol. B 18(6) (Nov/Dec 2000), p 3019.
9. V. Farys, P. Schiavone, F. Polack, C. Vannuffel, E. Quesnel, and M. Bertolo: Proc. 2nd International EUV Lithography Symposium, Antwerp, 2003.
10. P. Naulleau, K. A. Goldberg, E.H. Anderson:" Lithographic characterisation of the printability of programmed extreme ultraviolet substrate defects", J. Vac. Sci. Technol. B 21(4) (Jul/Aug 2003), p 1286.
11. P.Schiavone, R.Payerne, "Rigorous simulation of line defects in EUV mask", Microprocesses and Nanotechnology Conference, MNC 2001, Matsue, Japan, 2001.
12. X. Lee: http://www.xahlee.org/SpecialPlaneCurves_dir/Parallel_dir/ parallel.html.
13. T.Pistor, Y. Deng, A. Neureuther:" Extreme ultraviolet mask defect simulation: Low profile defects", J. Vac. Sci. Technol., B 18(6), pp 2926, Nov/Dec (2000).
14. M. Besacier, P. Schiavone:" Shadowing effect minimization in EUV mask by modelling", Photomask and Next-Generation Lithography Mask Technology XI, Yokohama, Japan, 2004, vol 5446. [5446-80].
15. nd annual International Workshop on Extreme Ultraviolet Lithography, Oct 16-19, 2000.