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Chemical Physics Letters

Volumn 413, Issue 4-6, 2005, Pages 479-483

The role of GaN/AlN double buffer layer in the crystal growth and photoluminescence of GaN nanowires

(4) Choi, Heon Jin a Kim, Dae Hee b Kim, Tae Geun c Sung, Yun Mo c

a Yonsei University (South Korea)

b Daejin University (South Korea)

c Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; LATTICE CONSTANTS; PHASE EQUILIBRIA; PHOTOLUMINESCENCE; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); NANOWIRES; SILICON SUBSTRATES; VAPOR-LIQUID-SOLID (VLS) GROWTH;

NANOSTRUCTURED MATERIALS;

EID: 24644471410 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/j.cplett.2005.08.035 Document Type: Article

Times cited : (4)

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