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Volumn 13, Issue 1-3, 2004, Pages 839-846

Influence of growth temperature on surface morphologies of GaN crystals grown on dot-patterned substrate by hydride vapor phase epitaxy

Author keywords

ELO; GaN; Hexagonal column; HVPE

Indexed keywords

CRYSTAL GROWTH; DESORPTION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SILICA; SUBSTRATES; SURFACES; THERMAL EFFECTS;

EID: 17044393486     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-004-5201-0     Document Type: Conference Paper
Times cited : (6)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.